TK100A08N1,S4X

MOSFET (Metal Oxide) N-Channel Tube 3.2mOhm @ 50A, 10V ±20V 9000pF @ 40V 130nC @ 10V 80V TO-220-3 Full Pack


  • Manufacturer: Toshiba Semiconductor and Storage
  • NO: 4669-TK100A08N1,S4X
  • Package: TO-220-3 Full Pack
  • Datasheet: pdf
  • Stock: 14999
  • Description: MOSFET (Metal Oxide) N-Channel Tube 3.2mOhm @ 50A, 10V ±20V 9000pF @ 40V 130nC @ 10V 80V TO-220-3 Full Pack (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220SIS
Weight 6.000006g
Operating Temperature 150°C TJ
Packaging Tube
Published 2014
Series U-MOSVIII-H
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Turn On Delay Time 53 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 40V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 26ns
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 46 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 9nF
Drain to Source Resistance 2.6mOhm
Rds On Max 3.2 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant

In Stock

Please send RFQ , we will respond immediately.