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SVD2955T4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-SVD2955T4G
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 4249
- Description: SVD2955T4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Reach Compliance Code | not_compliant |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 55W Tj |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 180m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 12A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 12A |
| Drain-source On Resistance-Max | 0.18Ohm |
| Pulsed Drain Current-Max (IDM) | 18A |
| DS Breakdown Voltage-Min | 60V |
| Avalanche Energy Rating (Eas) | 216 mJ |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 22 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
SVD2955T4G Description
SVD2955T4G is a type of P-channel power MOSFET provided by ON Semiconductor for low-voltage, high-speed switching applications. It is able to withstand high energy in the avalanche and commutation modes. Based on its specific characteristics, it is capable of providing considerable benefits for bridge circuits where diode speed and commutating safe operating areas are essential.
SVD2955T4G Features
Avalanche energy specified
Available in the DPAK package
IDSS and VDS(on) specified at elevated temperature
Designed for low-voltage, high-speed switching applications
SVD2955T4G Applications
Power supplies
Converters
Bridge circuits
Power motor controls
