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ContactSUP85N10-10P-GE3
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 10m Ω @ 20A, 10V ±20V 4660pF @ 50V 120nC @ 10V 100V TO-220-3
- Manufacturer: Vishay Siliconix
- NO: 880-SUP85N10-10P-GE3
- Package: TO-220-3
- Datasheet:
- Stock: 6021
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 10m Ω @ 20A, 10V ±20V 4660pF @ 50V 120nC @ 10V 100V TO-220-3 (Kg)
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| Parameters | |
|---|---|
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 3.75W Ta 227W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.75W |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 10m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4660pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 85A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 85A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Pulsed Drain Current-Max (IDM) | 240A |
| Nominal Vgs | 3 V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
