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ContactSUD50P08-26-E3
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 26mOhm @ 12.9A, 10V ±20V 5160pF @ 40V 155nC @ 10V 80V TO-252-3, DPak (2 Leads + Tab), SC-63
- Manufacturer: Vishay Siliconix
- NO: 880-SUD50P08-26-E3
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 6012
- Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 26mOhm @ 12.9A, 10V ±20V 5160pF @ 40V 155nC @ 10V 80V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252, (D-Pak) |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 8.3W Ta 136W Tc |
| Element Configuration | Single |
| Power Dissipation | 8.3W |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 12.9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5160pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 155nC @ 10V |
| Rise Time | 50ns |
| Drain to Source Voltage (Vdss) | 80V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 65 ns |
| Turn-Off Delay Time | 90 ns |
| Continuous Drain Current (ID) | 12.9A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -80V |
| Input Capacitance | 5.16nF |
| Drain to Source Resistance | 26mOhm |
| Rds On Max | 26 mΩ |
| RoHS Status | ROHS3 Compliant |
