SUD50P04-08-GE3

SUD50P04-08-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi


  • Manufacturer: Vishay Siliconix
  • NO: 880-SUD50P04-08-GE3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 8264
  • Description: SUD50P04-08-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 8.1mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 73.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 73.5W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.1m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5380pF @ 20V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 159nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) -50A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -40V
Max Junction Temperature (Tj) 150°C
Height 2.507mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

SUD50P04-08-GE3 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5380pF @ 20V.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -50A.A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -40V, and this device has a drainage-to-source breakdown voltage of -40VV.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 70 ns.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.-1V is the threshold voltage at which an electrical device activates any of its operations.In order to operate this transistor, a voltage of 40V is needed from the drain to the source (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

SUD50P04-08-GE3 Features


a continuous drain current (ID) of -50A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 70 ns
a threshold voltage of -1V
a 40V drain to source voltage (Vdss)

SUD50P04-08-GE3 Applications


There are a lot of Vishay Siliconix SUD50P04-08-GE3 applications of single MOSFETs transistors.

  • Telecom 1 Sever Power Supplies
  • Server power supplies
  • Consumer Appliances
  • Battery Protection Circuit
  • Motor Drives and Uninterruptible Power Supples
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Power Management Functions
  • Industrial Power Supplies
  • LCD/LED/ PDP TV Lighting

In Stock

Please send RFQ , we will respond immediately.