SUD40N02-08-E3

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8.5m Ω @ 20A, 4.5V ±12V 2660pF @ 20V 35nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63


  • Manufacturer: Vishay Siliconix
  • NO: 880-SUD40N02-08-E3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 31574
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8.5m Ω @ 20A, 4.5V ±12V 2660pF @ 20V 35nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 8.3W Ta 71W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 71W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5m Ω @ 20A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 2660pF @ 20V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Rise Time 120ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 40A
Threshold Voltage 600mV
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.0085Ohm
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Nominal Vgs 600 mV
Height 2.3876mm
Length 6.7056mm
Width 6.223mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant

In Stock

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