STY145N65M5

STY145N65M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • NO: 761-STY145N65M5
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 7426
  • Description: STY145N65M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh™ V
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STY145
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 625W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 625W
Turn On Delay Time 255 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 69A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 18500pF @ 100V
Current - Continuous Drain (Id) @ 25°C 138A Tc
Gate Charge (Qg) (Max) @ Vgs 414nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 82 ns
Turn-Off Delay Time 88 ns
Continuous Drain Current (ID) 138A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 710V
Pulsed Drain Current-Max (IDM) 552A
Avalanche Energy Rating (Eas) 2420 mJ
Height 20.3mm
Length 15.9mm
Width 5.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STY145N65M5 Description


STY145N65M5 is a 710V N-channel MDmesh? M5 Power MOSFET. This STY145N65M5 is an N-channel Power MOSFET based on the MDmesh? M5 innovative vertical process technology combined with the well-known PowerMESH? horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor STY145N65M5 is in the Max247 package with 625W power dissipation. 



STY145N65M5 Features


Extremely low RDS(on)

Low gate charge and input capacitance

Excellent switching performance

100% avalanche tested



STY145N65M5 Applications


Switching applications

Automotive 

Body electronics & lighting 

Communications equipment 

Broadband fixed line access 

Personal electronics 

Connected peripherals & printers


In Stock

Please send RFQ , we will respond immediately.