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STY112N65M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STY112N65M5
- Package: TO-247-3
- Datasheet:
- Stock: 5759
- Description: STY112N65M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ V |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 22MOhm |
| Terminal Finish | Tin (Sn) |
| Additional Feature | AVALANCHE ENERGY RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STY112 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 625W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 625W |
| Turn On Delay Time | 267 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 22m Ω @ 47A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 16870pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 96A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 350nC @ 10V |
| Rise Time | 79ns |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 140 ns |
| Turn-Off Delay Time | 53 ns |
| Continuous Drain Current (ID) | 96A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 710V |
| Height | 20.3mm |
| Length | 5.9mm |
| Width | 5.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STY112N65M5 Description
STY112N65M5 MOSFET is built on well-established silicon processes that supply designers with an array of devices. STY112N65M5 N-channel MOSFET is a type of the MDmesh DK5 fast-recovery diode series. STMicroelectronics STY112N65M5 is utilized to control High-Frequency Synchronous Buck Converters for computer Processor Power, High Frequency Isolated DC-DC Convertors with Synchronous Rectification Telecom and Industrial use.
STY112N65M5 Features
100% avalanche tested
Easy to drive
Higher dv/dt capability
Excellent switching performance
Higher VDSSrating
STY112N65M5 Applications
Reverse Polarity Switch
DC/DC Conversion
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
Telecom and Industrial Use
