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ContactSTY105NM50N
MOSFET (Metal Oxide) N-Channel Tube 22m Ω @ 52A, 10V ±25V 9600pF @ 100V 326nC @ 10V 500V TO-247-3
- Manufacturer: STMicroelectronics
- NO: 761-STY105NM50N
- Package: TO-247-3
- Datasheet:
- Stock: 6924
- Description: MOSFET (Metal Oxide) N-Channel Tube 22m Ω @ 52A, 10V ±25V 9600pF @ 100V 326nC @ 10V 500V TO-247-3 (Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 247 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ II |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Resistance | 22MOhm |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STY105 |
| Number of Elements | 1 |
| Power Dissipation-Max | 625W Tc |
| Element Configuration | Single |
| Power Dissipation | 625W |
| Turn On Delay Time | 47 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 22m Ω @ 52A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 9600pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 110A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 326nC @ 10V |
| Rise Time | 88ns |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 70 ns |
| Turn-Off Delay Time | 353 ns |
| Continuous Drain Current (ID) | 110A |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 600V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
