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STW9N150 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STW9N150
- Package: TO-247-3
- Datasheet:
- Stock: 3626
- Description: STW9N150 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 2.5Ohm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STW9N |
| Pin Count | 3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 320W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 320W |
| Turn On Delay Time | 41 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.5 Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3255pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 8A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 89.3nC @ 10V |
| Rise Time | 14.7ns |
| Drain to Source Voltage (Vdss) | 1500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 52 ns |
| Turn-Off Delay Time | 86 ns |
| Continuous Drain Current (ID) | 8A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain Current-Max (Abs) (ID) | 8A |
| Drain to Source Breakdown Voltage | 1.5kV |
| Avalanche Energy Rating (Eas) | 720 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Height | 24.45mm |
| Length | 15.75mm |
| Width | 5.15mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STW9N150 Description
With a voltage of 1500V, the STW9N150 is an extremely high voltage Power MESHTM Power MOSFET from STMicroelectronics. STMicroelectronics has designed an improved family of Power MOSFETs with remarkable performance using the well-consolidated high voltage MESH OVERLAYTM technology. The company's innovative edge termination structure, together with the enhanced layout, results in the lowest RDS(on) per area, as well as unrivaled gate charge and switching characteristics.
STW9N150 Features
100% avalanche tested
Avalanche ruggedness
Gate charge minimized
Very low intrinsic capacitances
High-speed switching
Very low on-resistance
STW9N150 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
