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MOSFET (Metal Oxide) N-Channel Tube 43m Ω @ 34A, 10V ±25V 5790pF @ 100V 178nC @ 10V TO-247-3
- Manufacturer: STMicroelectronics
- NO: 761-STW60NM50N
- Package: TO-247-3
- Datasheet:
- Stock: 1455
- Description: MOSFET (Metal Oxide) N-Channel Tube 43m Ω @ 34A, 10V ±25V 5790pF @ 100V 178nC @ 10V TO-247-3 (Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Lifecycle Status | NRND (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ II |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STW60N |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 446W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 446W |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 43m Ω @ 34A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5790pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 68A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 178nC @ 10V |
| Rise Time | 36ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 27.5 ns |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 68A |
| Gate to Source Voltage (Vgs) | 25V |
| Drain-source On Resistance-Max | 0.043Ohm |
| Drain to Source Breakdown Voltage | 500V |
| Pulsed Drain Current-Max (IDM) | 272A |
| Avalanche Energy Rating (Eas) | 551 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
