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STW47NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STW47NM60ND
- Package: TO-247-3
- Datasheet:
- Stock: 7345
- Description: STW47NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Continuous Drain Current (ID) | 35A |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 600V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | Automotive, AEC-Q101, FDmesh™ II |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 88MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STW47N |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 255W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 255W |
| Turn On Delay Time | 30 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 88m Ω @ 17.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4200pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 35A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
| Rise Time | 40ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 50 ns |
| Turn-Off Delay Time | 120 ns |
STW47NM60ND Description
The STW47NM60ND is an N-channel Power MOSFET designed with MDmesh? technology's second generation. This ground-breaking Power MOSFET combines a vertical structure with the company's strip layout to produce one of the world's lowest on-resistance and gate charges. As a result, it is appropriate for the most demanding high-efficiency converters.
STW47NM60ND Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche capabilities
The worldwide best RDS(on)*area amongst the fast recovery diode devices
STW47NM60ND Applications
Switching applications
