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STW40N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STW40N60M2
- Package: TO-247-3
- Datasheet:
- Stock: 9131
- Description: STW40N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 38.000013g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ II Plus |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STW40N |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 250W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 20.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 88m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 34A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 57nC @ 10V |
| Rise Time | 13.5ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 96 ns |
| Continuous Drain Current (ID) | 34A |
| Gate to Source Voltage (Vgs) | 25V |
| Drain-source On Resistance-Max | 0.088Ohm |
| DS Breakdown Voltage-Min | 600V |
| Avalanche Energy Rating (Eas) | 500 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STW40N60M2 Description
The STW40N60M2 is an N-channel 600 V, 0.078 ? typ., 34 A MDmesh M2 Power MOSFETs in D2PAK, TO-220 and TO-247 packages. The N-channel Power MOSFETs used in these products were created utilizing the MDmesh? M2 technology. The devices have low on-resistance and optimal switching characteristics because of their strip layout and improved vertical structure, making them suited for the most demanding high-efficiency converters.
STW40N60M2 Features
100% avalanche tested
Zener-protected
Extremely low gate charge
Excellent output capacitance (Coss) profile
Continuous drain current (ID)
STW40N60M2 Applications
Switching applications
LLC converters, resonant converters
Power-Over-Ethernet (PoE)
Solar inverters
Automotive applications
