STW34N65M5

MOSFET (Metal Oxide) N-Channel Tube 110m Ω @ 14A, 10V ±25V 2700pF @ 100V 62.5nC @ 10V TO-247-3


  • Manufacturer: STMicroelectronics
  • NO: 761-STW34N65M5
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 918
  • Description: MOSFET (Metal Oxide) N-Channel Tube 110m Ω @ 14A, 10V ±25V 2700pF @ 100V 62.5nC @ 10V TO-247-3 (Kg)

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 100V
Current - Continuous Drain (Id) @ 25°C 28A Tc
Gate Charge (Qg) (Max) @ Vgs 62.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Turn-Off Delay Time 59 ns
Continuous Drain Current (ID) 28A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh™ V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 110mOhm
Technology MOSFET (Metal Oxide)
Base Part Number STW34N
Number of Elements 1
Power Dissipation-Max 190W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 190W
Turn On Delay Time 59 ns

In Stock

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