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STW20NM60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STW20NM60
- Package: TO-247-3
- Datasheet:
- Stock: 7600
- Description: STW20NM60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 290mOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 650V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 20A |
| Base Part Number | STW20N |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 192W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 192W |
| Turn On Delay Time | 25 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 290m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
| Rise Time | 20ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 42 ns |
| Continuous Drain Current (ID) | 20A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 80A |
| Avalanche Energy Rating (Eas) | 650 mJ |
| Height | 6.35mm |
| Length | 50.8mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Through Hole |
STW20NM60 Description
The company's PowerMESHTM horizontal arrangement is associated with the multiple drain process by the new, cutting-edge MDmeshTM Power MOSFET technology. The finished product has superb avalanche characteristics, an extremely high dv/dt, and an outstanding low on-resistance. When the company's exclusive strip technology is used, the resulting dynamic performance is noticeably superior to that of identical items made by rival companies.
STW20NM60 Features
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
STW20NM60 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
