STW20N95K5

STW20N95K5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • NO: 761-STW20N95K5
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 8231
  • Description: STW20N95K5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH5™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 330MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STW20N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 330m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 100V
Current - Continuous Drain (Id) @ 25°C 17.5A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 17.5A
Threshold Voltage 4V
JEDEC-95 Code TO-247AA
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 950V
Pulsed Drain Current-Max (IDM) 62A
Nominal Vgs 4 V
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
STW20N95K5 Description

The STW20N95K5 is a 950V N-channel Power MOSFET that was created with SuperMESHTM 5 technology. This breakthrough, avalanche-resistant, high voltage Power MOSFET technology is built on a unique proprietary vertical structure. As a result, on-resistance is drastically reduced, and gate charge is extremely low for applications requiring high power density and efficiency. To satisfy today's demanding efficiency requirements, improved gate charge and decreased power dissipation are required.
STW20N95K5 Features

100% avalanche tested
Ultra-low gate charge
Zener-protected
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)

STW20N95K5 Applications

Datacom module
Wired networking
Wireless infrastructure

In Stock

Please send RFQ , we will respond immediately.