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STW11NM80 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STW11NM80
- Package: TO-247-3
- Datasheet:
- Stock: 437
- Description: STW11NM80 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 11A |
| Base Part Number | STW11N |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 150W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 150W |
| Turn On Delay Time | 22 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 400m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1630pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 11A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 43.6nC @ 10V |
| Rise Time | 17ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 46 ns |
| Continuous Drain Current (ID) | 5.5A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 800V |
| Pulsed Drain Current-Max (IDM) | 44A |
| Avalanche Energy Rating (Eas) | 400 mJ |
| Height | 20.15mm |
| Length | 15.75mm |
| Width | 5.15mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 400mOhm |
| Terminal Finish | Tin (Sn) |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 800V |
STW11NM80 Description
STW11NM80 MOSFETs are made with STMicroelectronics' unique MDmeshTM technology, which combines the company's PowerMESHTM horizontal architecture with the multiple drain process. These devices have a very low on-resistance, a high dv/dt, and good avalanche properties. These Power MOSFETs have an overall dynamic performance that is superior to similar items on the market because to ST's proprietary strip process.
STW11NM80 Features
Gate charge and input capacitance are both low.
Low input gate resistance
The industry's best RDS(on)*Qg
STW11NM80 Applications
Switching applications
