STV200N55F3

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.5m Ω @ 75A, 10V ±20V 6800pF @ 25V 100nC @ 10V PowerSO-10 Exposed Bottom Pad


  • Manufacturer: STMicroelectronics
  • NO: 761-STV200N55F3
  • Package: PowerSO-10 Exposed Bottom Pad
  • Datasheet: pdf
  • Stock: 3145
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.5m Ω @ 75A, 10V ±20V 6800pF @ 25V 100nC @ 10V PowerSO-10 Exposed Bottom Pad (Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerSO-10 Exposed Bottom Pad
Number of Pins 10
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series STripFET™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Resistance 2.5MOhm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 250
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STV200
Pin Count 10
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 150ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 200A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 800A
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.