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STT6N3LLH6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STT6N3LLH6
- Package: SOT-23-6
- Datasheet:
- Stock: 8888
- Description: STT6N3LLH6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 20 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Number of Pins | 6 |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Series | DeepGATE™, STripFET™ VI |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STT6N |
| Power Dissipation-Max | 1.6W Tc |
| Element Configuration | Single |
| Power Dissipation | 1.6W |
| Turn On Delay Time | 4.8 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 25m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 283pF @ 24V |
| Current - Continuous Drain (Id) @ 25°C | 6A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 3.6nC @ 4.5V |
| Rise Time | 11.2ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 5.4 ns |
| Turn-Off Delay Time | 9.4 ns |
| Continuous Drain Current (ID) | 6A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 6A |
| Drain to Source Breakdown Voltage | 30V |
| Height | 1.3mm |
| Length | 3.05mm |
| Width | 1.75mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STT6N3LLH6 Description
STT6N3LLH6 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a drain to source voltage of 30V. The operating temperature of the STT6N3LLH6 is 150°C TJ and its maximum power dissipation is 1.6W Tc. This product is an N-channel Power MOSFET made with a new gate structure and the 6th generation of STripFET DeepGATE technology. The Power MOSFET that results has the lowest RDS(on) among all packages.
STT6N3LLH6 Features
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
High avalanche ruggedness
Low gate drive power losses
STT6N3LLH6 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
