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STS7NF60L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STS7NF60L
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 6599
- Description: STS7NF60L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | STripFET™ II |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 19.5mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | LOW THRESHOLD |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 7.5A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STS7N |
| Pin Count | 8 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.5W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 19.5m Ω @ 3.5A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 4.5V |
| Rise Time | 27ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 47 ns |
| Continuous Drain Current (ID) | 7.5A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 30A |
| Avalanche Energy Rating (Eas) | 350 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | 1 V |
| Height | 1.75mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STS7NF60L Description
STS7NF60L is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 60V. STMicroelectronis' proprietary "Single Feature SizeTM" strip-based technology has yielded this Power MOSFET. The resulting transistor has a high packing density for low onresistance, tough avalanche properties, and fewer key alignment stages, resulting in exceptional manufacturing reproducibility.
STS7NF60L Features
TYPICAL RDS(on) = 0.017 ?
STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
STS7NF60L Applications
DC MOTOR DRIVE
DC-DC CONVERTERS
BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
POWER MANAGEMENT IN PORTABLE/DESKTOP PCs
