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STS5N15F4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STS5N15F4
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 1599
- Description: STS5N15F4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 20 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Series | DeepGATE™, STripFET™ |
| JESD-609 Code | e4 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | STS5N |
| Pin Count | 8 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.5W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 13.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 63m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2710pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
| Rise Time | 5.1ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 11.4 ns |
| Turn-Off Delay Time | 39.7 ns |
| Continuous Drain Current (ID) | 5A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain-source On Resistance-Max | 0.063Ohm |
| Drain to Source Breakdown Voltage | 150V |
| Pulsed Drain Current-Max (IDM) | 20A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STS5N15F4 Description
STripFET "DeepGATE" power MOSFET technology is one of the latest improvements, tailor-made to minimize on-resistance, using a new gate structure and providing excellent switching performance.
STS5N15F4 Features
■ N-channel enhancement mode
■ 100% avalanched rated
■ Low gate charge
■ Very low on-resistance
STS5N15F4 Application
■ Switching applications
