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ContactSTS3P6F6
STS3P6F6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STS3P6F6
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 4614
- Description: STS3P6F6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Digi-Reel® |
| Series | DeepGATE™, STripFET™ VI |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| ECCN Code | EAR99 |
| Resistance | 160mOhm |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STS3P |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.7W Tc |
| Element Configuration | Single |
| Power Dissipation | 2.7W |
| Turn On Delay Time | 6.4 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 160m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 48V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4nC @ 10V |
| Rise Time | 5.3ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3.7 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 3A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -60V |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STS3P6F6 Description
STS3P6F6 is a 60v P-channel STripFET? F6 Power MOSFET. The STS3P6F6 is a P-channel Power MOSFET developed using the 6th generation of STripFET? technology, with a new gate structure. The resulting Power MOSFET STS3P6F6 exhibits the lowest RDS(on) in all packages. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor STS3P6F6 is in the SOIC-8 package with 2.7W power dissipation.
STS3P6F6 Features
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
High avalanche ruggedness
Low gate drive power losses
Drain-source voltage: 60v
STS3P6F6 Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
