STQ3N45K3-AP

MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 3.8 Ω @ 500mA, 10V ±30V 150pF @ 25V 6nC @ 10V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)


  • Manufacturer: STMicroelectronics
  • NO: 761-STQ3N45K3-AP
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: pdf
  • Stock: 8218
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 3.8 Ω @ 500mA, 10V ±30V 150pF @ 25V 6nC @ 10V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) (Kg)

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  • Delivery: Delivery
  • Payment: payment

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SPECIFICATIONS

Parameters
Lifecycle Status NRND (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Series SuperMESH3™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Base Part Number STQ3
Pin Count 3
Number of Elements 1
Power Dissipation-Max 3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 600mA Tc
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 600mA
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.6A
Drain to Source Breakdown Voltage 450V
Pulsed Drain Current-Max (IDM) 2.4A
Height 4.95mm
Length 4.95mm
Width 3.94mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

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