STQ1NK60ZR-AP

STQ1NK60ZR-AP Overview

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 60 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 94pF @ 25V.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 400mA.As a result of its turn-off delay time, which is 13 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3.75V threshold voltage.Normal operation requires that the DS breakdown voltage remain above 600V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

STQ1NK60ZR-AP Features

the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 400mA
the turn-off delay time is 13 ns
a threshold voltage of 3.75V
a 600V drain to source voltage (Vdss)

STQ1NK60ZR-AP Applications

There are a lot of STMicroelectronics STQ1NK60ZR-AP applications of single MOSFETs transistors.

• General Purpose Interfacing Switch
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Server power supplies
• DC/DC converters
• LCD/LED/ PDP TV Lighting
• Synchronous Rectification
• Power Tools
• Consumer Appliances
• Load switching
• Lighting, Server, Telecom and UPS.