Products
Manufacturer
RFQ
NEWS
ContactSTQ1HNK60R-AP
MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 8.5 Ω @ 500mA, 10V ±30V 156pF @ 25V 10nC @ 10V 600V TO-226-3, TO-92-3 (TO-226AA)
- Manufacturer: STMicroelectronics
- NO: 761-STQ1HNK60R-AP
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 2369
- Description: MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 8.5 Ω @ 500mA, 10V ±30V 156pF @ 25V 10nC @ 10V 600V TO-226-3, TO-92-3 (TO-226AA) (Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Series | SuperMESH™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Base Part Number | STQ1 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3W |
| Turn On Delay Time | 6.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8.5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 156pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 400mA Tc |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Rise Time | 5ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 25 ns |
| Turn-Off Delay Time | 19 ns |
| Continuous Drain Current (ID) | 500mA |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain Current-Max (Abs) (ID) | 0.4A |
| DS Breakdown Voltage-Min | 600V |
| Avalanche Energy Rating (Eas) | 25 mJ |
| Height | 4.95mm |
| Length | 4.95mm |
| Width | 3.94mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 8 Weeks |
STQ1HNK60R-AP Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 25 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 156pF @ 25V.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 500mA amps.In this device, the drain current is 0.4A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 19 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 6.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3V.A normal operation of the DS requires keeping the breakdown voltage above 600V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STQ1HNK60R-AP Features
the avalanche energy rating (Eas) is 25 mJ
a continuous drain current (ID) of 500mA
the turn-off delay time is 19 ns
a threshold voltage of 3V
a 600V drain to source voltage (Vdss)
STQ1HNK60R-AP Applications
There are a lot of STMicroelectronics STQ1HNK60R-AP applications of single MOSFETs transistors.
- LCD/LED/ PDP TV Lighting
- Motor drives and Uninterruptible Power Supplies
- Battery Protection Circuit
- Micro Solar Inverter
- Synchronous Rectification
- Solar Inverter
- Consumer Appliances
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- AC-DC Power Supply
