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MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 8 Ω @ 600mA, 10V ±30V 140pF @ 50V 9.5nC @ 10V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Manufacturer: STMicroelectronics
- NO: 761-STQ1HN60K3-AP
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 1081
- Description: MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 8 Ω @ 600mA, 10V ±30V 140pF @ 50V 9.5nC @ 10V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) (Kg)
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In Stock
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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Series | SuperMESH3™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STQ1 |
| Power Dissipation-Max | 3W Tc |
| Element Configuration | Single |
| Power Dissipation | 3W |
| Turn On Delay Time | 7 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 8 Ω @ 600mA, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 400mA Tc |
| Gate Charge (Qg) (Max) @ Vgs | 9.5nC @ 10V |
| Rise Time | 10ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 31 ns |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | 400mA |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Height | 2.8mm |
| Length | 4.8mm |
| Width | 3.8mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
