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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 weeks ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | SuperMESH™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STP9N |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 35W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 35W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 22 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.2 Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1370pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
| Rise Time | 17ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 13 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | 4A |
| Threshold Voltage | 3.75V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain Current-Max (Abs) (ID) | 7.5A |
| Drain to Source Breakdown Voltage | 700V |
| Height | 16.4mm |
| Length | 10.4mm |
| Width | 4.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
The well-known strip-based PowerMESHTM layout of ST is greatly optimized to produce the SuperMESHTM series. In addition to drastically reducing on-resistance, extra effort is taken to guarantee excellent dv/dt capability for the most demanding applications. These series complete ST's line of high voltage MOSFETs, which includes the ground-breaking MDmeshTM devices.
TYPICAL RDS(on) = 1.0 ?
EXTREMELY HIGH dv/dt CAPABILITY
IMPROVED ESD CAPABILITY
100% AVALANCHE RATED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING REPEATIBILITY
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
Please send RFQ , we will respond immediately.