STP80NF06

STP80NF06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • NO: 761-STP80NF06
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 411
  • Description: STP80NF06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Lifecycle Status NRND (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Tube
Series STripFET™ II
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 8mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 80A
Base Part Number STP80N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3850pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time 85ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 80A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 870 mJ
Height 9.15mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Description


The STP80NF06 is an N-channel 60V - 0.0065? - 80A TO-220/D2PAK/TO-247 STripFET II? Power MOSFET. The "Single Feature Size?" strip-based technique used by STMicroelectronics to create this Power MOSFET is its most recent innovation. The resultant transistor exhibits remarkable manufacturing repeatability, robust avalanche properties, and extraordinarily high packing density for low on-resistance.



Features


  • 100% avalanche tested

  • Low threshold drive

  • Maximum single pulse avalanche energy (EAS)

  • On-resistance (RDS(ON))

  • Maximum junction temperature (TJ(max))



Applications


  • Switching application

  • Switch Mode Power Supplies (SMPS)

  • Power-Over-Ethernet (PoE)

  • Solar inverters

  • Automotive applications


In Stock

Please send RFQ , we will respond immediately.