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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | SuperMESH™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 1Ohm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 400V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 5.4A |
| Base Part Number | STP7N |
| Pin Count | 3 |
| Lead Pitch | 2.54mm |
| Number of Elements | 1 |
| Power Dissipation-Max | 70W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 70W |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1 Ω @ 2.7A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 535pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5.4A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| Rise Time | 15ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 30 ns |
| Reverse Recovery Time | 220 ns |
| Continuous Drain Current (ID) | 5.4A |
| Threshold Voltage | 3.75V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 400V |
| Dual Supply Voltage | 400V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STP7NK40Z Description
With a voltage of 400V, the STP7NK40Z is a Zener-protected N-channel Power MOSFET from STMicroelectronics. It is packaged in the TO-220-3 format. These high-voltage devices are Zener-protected N-channel Power MOSFETs developed by STMicroelectronics using the SuperMESHTM technology, which is an improvement on the well-known PowerMESHTM. These devices are designed to ensure a high level of DV/DT capability for the most demanding applications, in addition to a significant reduction in on-resistance.
STP7NK40Z Features
Extremely high DV/DT capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener-protected
STP7NK40Z Applications
Switching applications
Power Management
Industrial
DC-DC Conversion
Please send RFQ , we will respond immediately.