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STP4N150 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STP4N150
- Package: TO-220-3
- Datasheet:
- Stock: 2014
- Description: STP4N150 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 7Ohm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 1.5kV |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 4A |
| Base Part Number | STP4N |
| Pin Count | 3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 160W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 160W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 35 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 7 Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 4A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| Rise Time | 30ns |
| Drain to Source Voltage (Vdss) | 1500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 45 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | 4A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain Current-Max (Abs) (ID) | 4A |
| Drain to Source Breakdown Voltage | 1.5kV |
| Max Junction Temperature (Tj) | 150°C |
| Height | 19.68mm |
| Length | 10.4mm |
| Width | 4.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STP4N150 Description
STMicroelectronics has developed advanced STP4N150 Power MOSFETs, based on its well-established high voltage MESH OVERLAY* process, which provides outstanding performance. With the enhanced layout and the company's proprietary edge termination structure, the company is able to achieve the lowest RDS(on) per area, as well as the highest gate charge and switching performance.
STP4N150 Features
1500V, 4A N-channel PowerMESH? power MOSFET in 3 pins TO-220 package
100% avalanche tested
Intrinsic capacitances and Qg minimized
High-speed switching
Strengthened layout with an edge termination
Lowest RDS(on) per area, unrivaled gate charge, switching characteristics
Suitable for switching applications
Designed using the well consolidated high voltage MESH OVERLAY? process
STP4N150 Applications
General-Purpose Amplifier
Switch
Darlington Pair Designs
Motor speed control
Driver Modules like Relay Driver, LED driver, etc...
Inverter and Rectifier circuits
