STP40N60M2

MOSFET (Metal Oxide) N-Channel Tube 88m Ω @ 17A, 10V ±25V 2500pF @ 100V 57nC @ 10V TO-220-3


  • Manufacturer: STMicroelectronics
  • NO: 761-STP40N60M2
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 6257
  • Description: MOSFET (Metal Oxide) N-Channel Tube 88m Ω @ 17A, 10V ±25V 2500pF @ 100V 57nC @ 10V TO-220-3 (Kg)

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SPECIFICATIONS

Parameters
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™ II Plus
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STP40N
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Case Connection DRAIN
Turn On Delay Time 20.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 88m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 100V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Rise Time 13.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 96 ns
Continuous Drain Current (ID) 34A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.088Ohm
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 500 mJ
Max Junction Temperature (Tj) 150°C
Height 19.68mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 329.988449mg
Transistor Element Material SILICON

In Stock

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