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STP36N60M6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STP36N60M6
- Package: TO-220-3
- Datasheet:
- Stock: 5194
- Description: STP36N60M6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Drain Current-Max (Abs) (ID) | 30A |
| Drain-source On Resistance-Max | 0.099Ohm |
| Pulsed Drain Current-Max (IDM) | 102A |
| DS Breakdown Voltage-Min | 600V |
| Avalanche Energy Rating (Eas) | 750 mJ |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Series | MDmesh™ M6 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STP36N |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 208W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 99m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 4.75V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1960pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 30A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 44.3nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| JEDEC-95 Code | TO-220AB |
STP36N60M6 Description
The latest developments to the well-known and consolidated MD mesh family of SJ MOSFETs are incorporated into the new MD meshTM M6 technology. STMicroelectronics' new M6 technology, which combines excellent RDS(on) * area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for optimal end application efficiency, builds on the previous generation of MD mesh devices.
STP36N60M6 Features
Reduced switching losses
Lower RDS(on) x area vs the previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
STP36N60M6 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
