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STP36N55M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STP36N55M5
- Package: TO-220-3
- Datasheet:
- Stock: 1685
- Description: STP36N55M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ V |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STP36N |
| Number of Elements | 1 |
| Power Dissipation-Max | 190W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 190W |
| Case Connection | DRAIN |
| Turn On Delay Time | 56 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 80m Ω @ 16.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2670pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 33A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Turn-Off Delay Time | 56 ns |
| Continuous Drain Current (ID) | 33A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 25V |
| Drain-source On Resistance-Max | 0.08Ohm |
| Drain to Source Breakdown Voltage | 550V |
| Height | 15.75mm |
| Length | 10.4mm |
| Width | 4.6mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 17 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
STP36N55M5 Description
STP36N55M5 N-channel MOSFET is based on an original, unique vertical structure. STP36N55M5 MOSFET results in a dramatic reduction in the on-resistance and ultra-low gate charges for applications that require high power density and efficiency. STP36N55M5 STMicroelectronics is utilized in Switching applications.
STP36N55M5 Features
Low gate charge and input
capacitance
Extremely low RDS(on)
100% avalanche tested
Excellent switching performance
STP36N55M5 Applications
Notebook PC
Synchronous Buck
Notebook Vcore and Server
Notebook Battery Pack
Load Switch
