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ContactSTP33N65M2
STP33N65M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STP33N65M2
- Package: TO-220-3
- Datasheet:
- Stock: 2683
- Description: STP33N65M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ M2 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STP33N |
| Number of Elements | 1 |
| Power Dissipation-Max | 190W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 13.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 140m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1790pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 24A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 41.5nC @ 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Turn-Off Delay Time | 72.5 ns |
| Continuous Drain Current (ID) | 24A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 25V |
| Drain-source On Resistance-Max | 0.14Ohm |
| Pulsed Drain Current-Max (IDM) | 96A |
| DS Breakdown Voltage-Min | 650V |
| Avalanche Energy Rating (Eas) | 780 mJ |
| Height | 15.75mm |
| Length | 10.4mm |
| Width | 4.6mm |
| RoHS Status | ROHS3 Compliant |
STP33N65M2 Description
MDmeshTM M2 technology was used to build STP33N65M2, which are N-channel Power MOSFETs. The devices have low on-resistance and optimal switching characteristics due to their strip layout and improved vertical structure, making them suited for the most demanding high efficiency converters.
STP33N65M2 Features
? The gate charge is really inexpensive.
? The output capacitance (Coss) profile is excellent.
? Avalanche-proofed to the nth degree
? Protected by a zener
STP33N65M2 Applications
Switching applications
