STP260N6F6

STP260N6F6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • NO: 761-STP260N6F6
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 6841
  • Description: STP260N6F6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series DeepGATE™, STripFET™ VI
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 3MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STP260
Pin Count 3
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 31.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 183nC @ 10V
Rise Time 165ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 62.6 ns
Turn-Off Delay Time 144.4 ns
Continuous Drain Current (ID) 120A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 480A
Height 15.75mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 20 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole

STP260N6F6 Description


STP260N6F6 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 60V. The operating temperature of the STP260N6F6 is -55°C~175°C TJ and its maximum power dissipation is 300W Tc. These products are N-channel Power MOSFETs made with a new gate structure and the 6th generation of STripFET DeepGATE technology. The Power MOSFETs that are produced have the lowest RDS(on) among all packages.



STP260N6F6 Features


  • Low gate charge

  • Very low on-resistance

  • High avalanche ruggedness



STP260N6F6 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


In Stock

Please send RFQ , we will respond immediately.