STP24N60M2

MOSFET (Metal Oxide) N-Channel Tube 190m Ω @ 9A, 10V ±25V 1060pF @ 100V 29nC @ 10V TO-220-3


  • Manufacturer: STMicroelectronics
  • NO: 761-STP24N60M2
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 5350
  • Description: MOSFET (Metal Oxide) N-Channel Tube 190m Ω @ 9A, 10V ±25V 1060pF @ 100V 29nC @ 10V TO-220-3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 72A
Avalanche Energy Rating (Eas) 180 mJ
Height 15.75mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™ II Plus
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 190MOhm
Technology MOSFET (Metal Oxide)
Base Part Number STP24N
Number of Elements 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 100V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 61 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 18A
JEDEC-95 Code TO-220AB

In Stock

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