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ContactSTP22NM60N
STP22NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STP22NM60N
- Package: TO-220-3
- Datasheet:
- Stock: 5894
- Description: STP22NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Supplier Device Package | TO-220AB |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ II |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 220mOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STP22N |
| Number of Elements | 1 |
| Power Dissipation-Max | 125W Tc |
| Power Dissipation | 125W |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 16A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 38 ns |
| Turn-Off Delay Time | 74 ns |
| Continuous Drain Current (ID) | 16A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.3nF |
| Drain to Source Resistance | 200mOhm |
| Rds On Max | 220 mΩ |
| Height | 15.75mm |
| Length | 10.4mm |
| Width | 4.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STP22NM60N Description
The STP22NM60N is an N-channel Power MOSFET developed with MDmeshTM technology. Using a vertical structure, this Power MOSFET offers the lowest on-resistance and gate charge in the world. A converter with STP22NM60N can therefore be expected to meet the highest efficiency requirements.
STP22NM60N Features
100% avalanche tested
Low gate input resistance
Low input capacitance and gate charge
STP22NM60N Applications
Industrial
Power Management
Motor Drivers
Battery Chargers
Audio Amplifier Stages
Audio Power Amplifier Circuits
Audio Preamplifiers and Its Stages
Output of Microcontrollers
