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STP20NM60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STP20NM60
- Package: TO-220-3
- Datasheet:
- Stock: 1088
- Description: STP20NM60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 290mOhm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 650V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 20A |
| Base Part Number | STP20N |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 192W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 192W |
| Turn On Delay Time | 25 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 290m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
| Rise Time | 20ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 42 ns |
| Continuous Drain Current (ID) | 20A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 80A |
| Avalanche Energy Rating (Eas) | 650 mJ |
| Nominal Vgs | 4 V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STP20NM60 Description
The STP20NM60 MDmeshTM is a new innovative Power MOSFET technology that combines the company's PowerMESHTM horizontal architecture with the multiple drain process. The end result has an exceptional low on-resistance, an exceptionally high dv/dt, and good avalanche properties. The use of the company's proprietary strip process results in total dynamic performance that is far superior to that of similar competitors' products.
STP20NM60 Features
Avalanche and high dv/dt capabilities
Avalanche safety is guaranteed.
Low gate charge and input capacitance
Low input gate resistance
STP20NM60 Applications
Switching applications.
