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ContactSTP150N10F7
STP150N10F7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STP150N10F7
- Package: TO-220-3
- Datasheet:
- Stock: 9954
- Description: STP150N10F7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Weight | 329.988449mg |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Series | DeepGATE™, STripFET™ VII |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STP150 |
| Number of Channels | 1 |
| Power Dissipation-Max | 250W Tc |
| Element Configuration | Single |
| Turn On Delay Time | 33 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 4.2m Ω @ 55A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 8115pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 110A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 117nC @ 10V |
| Rise Time | 57ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 33 ns |
| Turn-Off Delay Time | 72 ns |
| Continuous Drain Current (ID) | 110A |
| Gate to Source Voltage (Vgs) | 20V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
Description
The STP150N10F7 is an N-channel 100 V, 0.0036 |? typ., 110 A, STripFET? F7 Power MOSFETs in I2PAK and TO-220 packages. These STripFET? F7 N-channel Power MOSFETs have an improved trench gate structure that yields very low on-state resistance while also lowering internal capacitance and gate charge for quicker and more effective switching.
Features
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Continuous drain current (ID)
Applications
Switching applications
Switch Mode Power Supplies (SMPS)
Power-Over-Ethernet (PoE)
Solar inverters
Automotive applications
