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STP13NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STP13NM60N
- Package: TO-220-3
- Datasheet:
- Stock: 3781
- Description: STP13NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ II |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 360mOhm |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STP13N |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 90W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 90W |
| Turn On Delay Time | 3 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 360m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 11A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Rise Time | 8ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 5.5A |
| Threshold Voltage | 3V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 44A |
| Avalanche Energy Rating (Eas) | 200 mJ |
| Nominal Vgs | 3 V |
| Height | 15.75mm |
| Length | 10.4mm |
| Width | 4.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STP13NM60N Description
The STP13NM60N device is N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
STP13NM60N Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
ROHS3 Compliant
No SVHC
Lead Free
STP13NM60N Applications
Switching applications
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
