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STP12NK80Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STP12NK80Z
- Package: TO-220-3
- Datasheet:
- Stock: 1504
- Description: STP12NK80Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | NRND (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | SuperMESH™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 750mOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 800V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 10.5A |
| Base Part Number | STP12 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 190W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 190W |
| Turn On Delay Time | 30 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 750m Ω @ 5.25A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2620pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 10.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
| Rise Time | 18ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 70 ns |
| Continuous Drain Current (ID) | 10.5A |
| Threshold Voltage | 3.75V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 800V |
| Pulsed Drain Current-Max (IDM) | 42A |
| Avalanche Energy Rating (Eas) | 400 mJ |
| Height | 9.15mm |
| Length | 10.4mm |
| Width | 4.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STP12NK80Z Description
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH? technology,
achieved through optimization of ST's well-established strip-based PowerMESH? layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a
high level of dv/dt capability for the most demanding applications.
STP12NK80ZFeatures
Extremely high dv/dt capability
Improved esd capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing reliability
STP12NK80Z Applications
Switching applications
