STP11NK40ZFP

STP11NK40ZFP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • NO: 761-STP11NK40ZFP
  • Package: TO-220-3 Full Pack
  • Datasheet: pdf
  • Stock: 1204
  • Description: STP11NK40ZFP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.55Ohm
Drain to Source Breakdown Voltage 400V
Height 9.3mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STP11N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Case Connection ISOLATED
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 930pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 9A
Threshold Voltage 3.75V
JEDEC-95 Code TO-220AB

STP11NK40ZFP Description


These high-voltage components are Zener-protected N-channel Power MOSFETs created by STMicroelectronics employing SuperMESHTM technology, an improvement of the well-known PowerMESHTM. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.



STP11NK40ZFP Features


  • 100% avalanche tested

  • Gate charge minimized

  • Very low intrinsic capacitance

  • Zener-protected



STP11NK40ZFP Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial

  • Switching applications


In Stock

Please send RFQ , we will respond immediately.