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STN1HNK60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STN1HNK60
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 891
- Description: STN1HNK60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | SuperMESH™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 8.5Ohm |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 600V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 400mA |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STN1H |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.3W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8.5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 156pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 400mA Tc |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Rise Time | 5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 25 ns |
| Turn-Off Delay Time | 19 ns |
| Continuous Drain Current (ID) | 500mA |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain Current-Max (Abs) (ID) | 0.4A |
| Drain to Source Breakdown Voltage | 600V |
| Avalanche Energy Rating (Eas) | 25 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | 3 V |
| Height | 1.82mm |
| Length | 6.5mm |
| Width | 3.5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
STN1HNK60 Description
The STN1HNK60 is a 600V N-channel SuperMESH? MOSFET with extreme optimization of well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
STN1HNK60 Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Drain-source voltage:600v
Gate- source voltage: ±30v
STN1HNK60 Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
