STL25N15F3

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 57m Ω @ 3A, 10V ±20V 1300pF @ 25V 29nC @ 10V 8-PowerVDFN


  • Manufacturer: STMicroelectronics
  • NO: 761-STL25N15F3
  • Package: 8-PowerVDFN
  • Datasheet: pdf
  • Stock: 2501
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 57m Ω @ 3A, 10V ±20V 1300pF @ 25V 29nC @ 10V 8-PowerVDFN (Kg)

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SPECIFICATIONS

Parameters
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 13ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 24A
Avalanche Energy Rating (Eas) 300 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series STripFET™ III
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 57MOhm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number STL25
Pin Count 8
JESD-30 Code R-XDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 80W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 80W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 57m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 25A Tc

In Stock

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