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STL140N4F7AG
  • STL140N4F7AG

STL140N4F7AG

STL140N4F7AG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • NO: 761-STL140N4F7AG
  • Package: 8-PowerVDFN
  • Datasheet: pdf
  • Stock: 6851
  • Description: STL140N4F7AG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, STripFET™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STL140
Power Dissipation-Max 111W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 120A
Threshold Voltage 4V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

STL140N4F7AG Description


STMicroelectronics' STL140N4F7AG N-channel Power MOSFET employs STripFET? F7 technology with an improved trench gate structure, resulting in exceptionally low on-state resistance while simultaneously decreasing internal capacitance and gate charge for faster and more efficient switching.



STL140N4F7AG Features


  • Low Crss/Ciss ratio for EMI immunity

  • High avalanche ruggedness

  • Wettable flank package

  • AEC-Q101 qualified

  • Among the lowest RDS(on) on the market

  • Excellent FoM (figure of merit)



STL140N4F7AG Applications


Switching applications


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