STL130N8F7

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.6m Ω @ 13A, 10V ±20V 6340pF @ 40V 96nC @ 10V 8-PowerVDFN


  • Manufacturer: STMicroelectronics
  • NO: 761-STL130N8F7
  • Package: 8-PowerVDFN
  • Datasheet: pdf
  • Stock: 1047
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.6m Ω @ 13A, 10V ±20V 6340pF @ 40V 96nC @ 10V 8-PowerVDFN (Kg)

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SPECIFICATIONS

Parameters
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series DeepGATE™, STripFET™ VII
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 3.6mOhm
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Base Part Number STL130
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 2
Power Dissipation-Max 135W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.6m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6340pF @ 40V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 123A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 560A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.