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| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Weight | 329.988449mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | SuperMESH5™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STF6N |
| Number of Channels | 1 |
| Power Dissipation-Max | 25W Tc |
| Element Configuration | Single |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.6 Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Rise Time | 7.5ns |
| Drain to Source Voltage (Vdss) | 800V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 28.5 ns |
| Continuous Drain Current (ID) | 4.5A |
| Gate to Source Voltage (Vgs) | 30V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
Utilizing MDmeshTM K5 technology, STF6N80K5 high voltage N-channel Power MOSFETs are created using a novel, patented vertical structure. As a result, on-resistance is drastically reduced, and ultra-low gate charges are produced for applications demanding a high level of efficiency and higher power density.
Zener-protected
Ultra low gate charge
100% avalanche tested
Industry?ˉs lowest RDS(on)
Industry?ˉs best figure of merit (FoM)
Automotive
Personal electronics
Communications equipment
Please send RFQ , we will respond immediately.