STF6N60M2

STF6N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • NO: 761-STF6N60M2
  • Package: TO-220-3 Full Pack
  • Datasheet: pdf
  • Stock: 741
  • Description: STF6N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™ II Plus
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STF6N
Number of Channels 1
Power Dissipation-Max 20W Tc
Element Configuration Single
Power Dissipation 20W
Turn On Delay Time 9.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2 Ω @ 2.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 232pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4.5A Ta
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Rise Time 7.4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 22.5 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Height 16.4mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack

STF6N60M2 Description

The STF6N60M2 is an N-channel Power MOSFET built with MDmeshTM M2 technology. The devices have low on-resistance and optimal switching characteristics due to their strip layout and improved vertical structure, making them suited for the most demanding high efficiency converters.

STF6N60M2 Features

Extremely low gate charge
Excellent output capacitance (Coss) profile
100% avalanche tested
Zener-protected

STF6N60M2 Application
Switching applications

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