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ContactSTF26NM60N
STF26NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STF26NM60N
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 9655
- Description: STF26NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 25V |
| Drain Current-Max (Abs) (ID) | 20A |
| Pulsed Drain Current-Max (IDM) | 80A |
| DS Breakdown Voltage-Min | 600V |
| Nominal Vgs | 3 V |
| Height | 16.4mm |
| Length | 10.4mm |
| Width | 4.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ II |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STF26 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 35W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 30W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 165m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Rise Time | 25ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 50 ns |
| Turn-Off Delay Time | 85 ns |
| Continuous Drain Current (ID) | 10A |
STF26NM60N Description
STF26NM60N is an N-channel Power MOSFET designed with MDmeshTM technology's second generation. This ground-breaking Power MOSFET combines a vertical structure with the company's strip layout to provide one of the lowest on-resistance and gate charges in the world. As a result, it is appropriate for the most demanding high-efficiency converters.
STF26NM60N Features
100% avalanche tested
Low gate input resistance
Low input capacitance and gate charge
STF26NM60N Applications
Switching applications
