STF25N80K5

MOSFET (Metal Oxide) N-Channel Tube 260m Ω @ 19.5A, 10V ±30V 1600pF @ 100V 40nC @ 10V TO-220-3 Full Pack


  • Manufacturer: STMicroelectronics
  • NO: 761-STF25N80K5
  • Package: TO-220-3 Full Pack
  • Datasheet: pdf
  • Stock: 7252
  • Description: MOSFET (Metal Oxide) N-Channel Tube 260m Ω @ 19.5A, 10V ±30V 1600pF @ 100V 40nC @ 10V TO-220-3 Full Pack (Kg)

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 19.5A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.26Ohm
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 78A
Avalanche Energy Rating (Eas) 200 mJ
Height 16.4mm
Length 10.6mm
Width 4.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH5™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STF25
Number of Elements 1
Power Dissipation-Max 40W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 40W
Case Connection ISOLATED
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 260m Ω @ 19.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 100V
Current - Continuous Drain (Id) @ 25°C 19.5A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 13ns

In Stock

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